Quasi-Direct Semiconductors

Project Personnel

Jose Menendez

Principal Investigator

Arizona State University

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John Kouvetakis

Co-Principal Investigator

Arizona State University

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Feliciano Giustino

University of Texas at Austin

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Funding Divisions

Division of Materials Research (DMR), Electrical, Communications and Cyber Systems (ECCS)

The rapid identification of materials and structures with properties tailored to specific applications is a fundamental aspect of the Materials Genome Initiative. A basic prerequisite for the success of the Initiative is the ability to predict the targeted properties starting from basic information about the atomic composition and configurations in the material. For devices such as solar cells, detectors, light-emitting diodes, and lasers, the key design consideration is the fraction of the incident light energy absorbed at any particular wavelength. This DMREF project focuses on a particular class of materials, dubbed “quasi-direct” semiconductors, for which a satisfactory theory of light absorption does not exist. The project will develop the theoretical tools needed for the calculation of optical absorption in quasi-direct semiconductors and validate the new theoretical methods by carrying out optical experiments in structures optimized for the accurate measurement of the absorption coefficient. 

More than 200 quasi-direct semiconductors have already been identified in the Materials Project database, and this project will make it possible to incorporate such materials as optical components of future devices. All codes released will be open source to maximize societal impact, and the semiconductor industry will also benefit from the highly trained STEM workforce delivered by the project. A strong educational focus will be placed on undergraduate students by partnering with the Arizona State University (ASU) Sundial Project, which recruits and mentors students who traditionally have limited access to STEM careers. At the University of Texas at Austin (UT Austin), undergraduates will be directly involved in the development of the new codes.

Publications

Synthesis of High Sn Content Ge1–xySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications
J. Kouvetakis, P. M. Wallace, C. Xu, D. A. Ringwala, M. Mircovich, M. A. Roldan, P. T. Webster, P. C. Grant, and J. Menéndez
10/6/2023
Electron–phonon physics from first principles using the EPW code
H. Lee, S. Poncé, K. Bushick, S. Hajinazar, J. Lafuente-Bartolome, J. Leveillee, C. Lian, J. Lihm, F. Macheda, H. Mori, H. Paudyal, W. H. Sio, S. Tiwari, M. Zacharias, X. Zhang, N. Bonini, E. Kioupakis, E. R. Margine, and F. Giustino
8/25/2023
Anharmonic electron-phonon coupling in ultrasoft and locally disordered perovskites
M. Zacharias, G. Volonakis, F. Giustino, and J. Even
8/24/2023
Anharmonic lattice dynamics via the special displacement method
M. Zacharias, G. Volonakis, F. Giustino, and J. Even
7/31/2023
High‐Pressure Synthesis and Thermal Conductivity of Semimetallic θ‐Tantalum Nitride
H. Lee, Y. Zhou, S. Jung, H. Li, Z. Cheng, J. He, J. Chen, P. Sokalski, A. Dolocan, R. Gearba‐Dolocan, K. C. Matthews, F. Giustino, J. Zhou, and L. Shi
2/7/2023
Excitonic effects at the temperature-dependent direct bandgap of Ge
C. Emminger, N. S. Samarasingha, M. Rivero Arias, F. Abadizaman, J. Menéndez, and S. Zollner
4/25/2022
Ultra-low temperature synthesis of Ge-based optical materials and devices on Si using GeH3Cl
A. Zhang, M. A. Mircovich, D. A. Ringwala, C. D. Poweleit, M. A. Roldan, J. Menéndez, and J. Kouvetakis
1/1/2022

View All Publications

Research Highlights

Ultra-low Temperature Synthesis of Ge-based Optical Materials and Devices on Si using GeH3Cl
J. Menéndez, J. Kouvetakis (Arizona State University)
1/1/2022
Excitonic Effects at the Direct Bandgap of Germanium
J. Menéndez, Arizona State University
1/1/2022

Designing Materials to Revolutionize and Engineer our Future (DMREF)