Field-free Deterministic Switching of all-van der Waals Spin-orbit Torque System Above Room Temperature

Aug 22, 2025
FGaT/WTe2 heterostructure device. (A) Schematic diagram of the FGaT/WTe2 heterostructure devices used in this study. (B) Schematic model of WTe2 crystal’s ab plane, with the a and b axes labeled. The crystal preserves mirror-plane symmetry in the bc plane but breaks it in the ac plane.
FGaT/WTe2 heterostructure device. (A) Schematic diagram of the FGaT/WTe2 heterostructure devices used in this study. (B) Schematic model of WTe2 crystal’s ab plane, with the a and b axes labeled. The crystal preserves mirror-plane symmetry in the bc plane but breaks it in the ac plane.

Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices.

However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, Fe3GaTe2, is reported above room temperature (up to 320 K).

This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.

Designing Materials to Revolutionize and Engineer our Future (DMREF)